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STP18NM60N

Documents & Media
Documents & Media
Datasheets STx18NM60ND
Product Training Modules STMicroelectronics ST MOSFETs
HTML Datasheet STx18NM60ND
Online Catalog N-Channel MOSFET (Metal Oxide)
Product Attributes
TYPE DESCRIPTION SELECT ALL 
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer STMicroelectronics
Series FDmesh™ II
Packaging Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 1030pF @ 50V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Base Part Number STP18N
Environmental & Export Classifications
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)


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